Dry Etch Recipe for W (cvd) in Chlorine Based RIE
Recipe
| Gasses: | |
BCl3 | 15.0 sccm |
Cl2 | 15.0 sccm |
He | 17.5 sccm |
| Pressure | 1.00 Pa |
| RF Power | 65 W |
| Substrate temperature: | 10 °C |
Etch characteristics
| Etch rate: 27 nm/min |
| Anisotropy: 90 % |
Selectivity
| Etch rate of AZ 1420: 75 nm/min |
Remarks
| Considerable loading effect |
| Almost no aspect ratio dependence |
| Etch rate increases with the amount of incorporated oxygen |
| Reproducibility: 20% |
| The wafer heats up considerably during etching. (mask choice!) |
| Recommended mask is hard baked AZ 1420 or HPR (120 °C) |